A2SHB三极管ic,A2SHB芯片 pdf规格书

Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. G-S Voltage

Fig.3 Source Drain Forward Characteristics Fig.4 Gate-Charge Characteristics

Fig.5 Normalized VGS(th) vs. TJ

Fig.6 Normalized RDSON vs. TJ

0.2

0.611.41.8-50050100150T J ,Junction Temperature (℃ )N o r m a l i z e d V G S (t h )0.2

0.61.01.41.8-50050100150

T J , Junction Temperature (℃)

N o r m a l i z e d O n R e s i s t a n c e -

Fig.7 Capacitance

Fig.8 Safe Operating Area

Figure 9Switching Time Waveform

Figure 10 Gate Charge Waveform

Notes

1. All dimensions are in millimeters.

2. Tolerance ±0.10mm (4 mil) unless otherwise specified

3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils.

4. Dimension L is measured in gauge plane.

5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.

BC857T贴片三极管 SOT-523三极管封装BC857T参数

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-523 Plastic-Encapsulate Transistors ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C = -10μA, I E 0 -50 V Collector-emitter breakdown voltage V (BR)CEO I C = -10mA, I B 0 -45 V Emitter-base breakdown voltage V (BR)EBO I E = -1μA, I C 0 -6 V Collector Cutoff Current I CBO V CB -30V -15 nA DC current gain BC857AT BC857BT BC857CT h FE V CE =-5V, I C =-2mA 125 220 420 250 475800 Collector-emitter saturation voltage V CE (sat)I C =-10mA, I B =-0.5 mA I C =-100mA, I B =-5 mA -0.3 -0.65 V Base-emitter saturation voltage V BE (sat)I C =-10mA, I B =-0.5 mA I C =-100mA, I B = -5 mA -0.7-0.9 V Base-emitter voltage V BE(on) V CE = -5V, I C = -2mA V CE = -5V, I C = -10mA -600 660 -750-820 mV Transition frequency f T V CE = -5 V, I C = -10mA f=100MHz 100 MHz Collector output capacitance C ob V CB =-10V,f = 1MHz 4.5 pF Noise figure NF V CE =-5V,I C =-0.2mA, f=1KHZ, R S =2K ?,BW=200HZ 10 dB A,May,2011

三极管型号及参数

这些虽不能涵盖所有的三极管型号，例如3DD系列等，但是都是极其常用的型号，例如901系列，简直是无所不在。在网上查的电子元件手册都是卖书的广告，找到点参数型号确实不易。 S9013是NPN型三极管，放大倍数分为六级，在三极管上有标识： D级：64-91 E级：78-112 F级：96-135 G级：112-166 H级：144-220 I级：190-300 名称封装极性功能耐压电流功率频率配对管 D63328NPN音频功放开关100V7A40W达林顿 9013 21 NPN 低频放大50V0. 5A0. 625W 9012 9014 21 NPN 低噪放大50V0. 1A0. 4W 150HM Z9015 9015 21 PNP 低噪放大50V0. 1A0. 4W 150MHZ 9014 901821NPN高频放大30V0.05A0.4W1000MHZ 805021NPN高频放大40V1.5A1W100MHZ8550 855021PNP高频放大40V1.5A1W100MHZ8050 2N222221NPN通用60V0.8A0.5W25／200NS 2N23694ANPN开关40V0.5A0.3W800MHZ 2N29074ANPN通用60V0.6A0.4W26／70NS 2N305512NPN功率放大100V15A115WMJ2955 2N34406NPN视放开关450V1A1W15MHZ2N6609 2N377312NPN音频功放开关160V16A50W 2N390421ENPN通用60V0.2A 2N290621CPNP通用40V0.2A 2N2222A21铁NPN高频放大75V0.6A0.625W300MHZ 2N671821铁NPN音频功放开关100V2A2W 2N540121PNP视频放大160V0.8050三极管引脚图6A0.625W100MHZ2N5551 2N555121NPN视频放大160V0.6A0.625W100MHZ2N5401 2N568512NPN音频功放开关60V50A300W 2N627712NPN功放开关180V50A250W 901221PNP低频放大50V0.5A0.625W9013 2N667812NPN音频功放开关650V15A175W15MHZ 9012贴片PNP低频放大50V0.5A0.625W9013 3DA87A6NPN视频放大100V0.1A1W 3DG6B6NPN通用20V0.02A0.1W150MHZ 3DG6C6NPN通用25V0.02A0.1W250MHZ 3DG6D6NPN通用30V0.02A0.1W150MHZ MPSA4221ENPN电话视频放大300V0.5A0.625WMPSA92 MPSA9221EPNP电话视频放大300V0.5A0.625WMPSA42 MPS2222A21NPN高频放大75V0.6A0.625W300MHZ

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常见大中功率管三极管参数 晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型2SD1402 1500V 5A 120W * * NPN 2SD1399 1500V 6A 60W * * NPN 2SD1344 1500V 6A 50W * * NPN 2SD1343 1500V 6A 50W * * NPN 2SD1342 1500V 5A 50W * * NPN 2SD1941 1500V 6A 50W * * NPN 2SD1911 1500V 5A 50W * * NPN 2SD1341 1500V 5A 50W * * NPN 2SD1219 1500V 3A 65W * * NPN 2SD1290 1500V 3A 50W * * NPN 2SD1175 1500V 5A 100W * * NPN 2SD1174 1500V 5A 85W * * NPN 2SD1173 1500V 5A 70W * * NPN 2SD1172 1500V 5A 65W * * NPN 2SD1143 1500V 5A 65W * * NPN 晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型2SD1142 1500V 3.5A 50W * * NPN 2SD1016 1500V 7A 50W * * NPN 2SD995 2500V 3A 50W * * NPN 2SD994 1500V 8A 50W * * NPN 2SD957A 1500V 6A 50W * * NPN 2SD954 1500V 5A 95W * * NPN 2SD952 1500V 3A 70W * * NPN 2SD904 1500V 7A 60W * * NPN 2SD903 1500V 7A 50W * * NPN 2SD871 1500V 6A 50W * * NPN 2SD870 1500V 5A 50W * * NPN 2SD869 1500V 3.5A 50W * * NPN 2SD838 2500V 3A 50W * * NPN 2SD822 1500V 7A 50W * * NPN 2SD821 1500V 6A 50W * * NPN 晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型2SD348 1500V 7A 50W * * NPN 2SC4303A 1500V 6A 80W * * NPN 2SC4292 1500V 6A 100W * * NPN 2SC4291 1500V 5A 100W * * NPN 2SC4199A 1500V 10A 100W * * NPN 2SC3883 1500V 5A 50W * * NPN 2SC3729 1500V 5A 50W * * NPN 2SC3688 1500V 10A 150W * * NPN

MEMORY存储芯片STM32F103C8T6中文规格书

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大功率三极管参数 MJ15024 | NPN | 250V | 16A | 250 W MJ15025 | PNP | 250V | 16A |250 W E13005-2是“高速/高压开关管” 参数：硅、NPN、700V/400V 、8A 、75W 、β≥10 三极管参数大全 BU2525AF NPN 30 开关功放1500V12A150W /350NS BU2525AX NPN 30 开关功放1500V12A150W /350NS BU2527AF NPN 30 开关功放1500V15A150W BU2532AW NPN 30 开关功放1500V15A150W(大屏) BUH515 NPN BCE 行管1500V10A80W BUH515D NPN BCE 行管1500V10A80W(带阻尼) BUS13A NPN 12 开关功放1000V15A175W BUS14A NPN 12 开关功放1000V30A250W BUT11A NPN 28 开关功放1000V5A100W BUT12A NPN 28 开关功放450V10A125W BUV26 NPN 28 音频功放开关90V14A65W /250ns BUV28A NPN 28 音频功放开关225V10A65W /250ns BUV48A NPN 30 音频功放开关450V15A150W BUW13A NPN 30 功放开关1000V15A150W BUX48 NPN 12 功放开关850V15A125W BUX84 NPN 30 功放开关800V2A40W BUX98A NPN 12 功放开关400V30A210W5MHZ DTA114 PNP 10K-10K 160V0.6A0.625W(带阻) DTC143 NPN 录像机用4.7K-4.7K HPA100 NPN BCE 大屏彩显行管21# HPA150 NPN BCE 大屏彩显行管21# HSE830 PNP BCE 音频功放80V115W1MHZ HSE838 NPN BCE 音频功放80V115W1MHZ COP/MJ4502 MN650 NPN BCE 行管1500V6A80W MJ802 NPN 12 音频功放开关90V30A200W MJ2955 PNP 12 音频功放开关60V15A115W MJ3055 NPN 12 音频功放开关60V15A115W MJ4502 PNP 12 音频功放开关90V30A200W COP/MJ802 MJ10012 NPN 12 达林顿400V10A175W MJ10015 NPN 12 电源开关400V50A200W

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3904 3906三极管说明

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-563 Plastic-Encapsulate Transistors NST3946 General purpose transistors (dual transistors) DESCRIPTION It is designed for general purpose amplifier applications . By putting two mount applications where board space is at a premium. z Low V CE(sat) z Simplifies Circuit Design z Reduces Board Space z Reduces Component Count Marking: 46 Equivalent circuit 1

CBO V CEO Collector-Emitter Voltage -40 V V EBO Emitter-Base Voltage -5 V I C Collector Current -200 mA P C Collector Power Dissipation 150 mW R θJA Thermal Resistance from Junction to Ambient 833 ℃/W T J Junction Temperature 150 ℃ T stg Storage Temperature -55~+150 ℃ ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =-10μA, I E = 0 -40 V Collector-emitter breakdown voltage V (BR)CEO I C =-1mA, I B =0 -40 V Emitter-base breakdown voltage V (BR)EBO I E =-10μA, I C = 0 -5 V Collector cut-off current I CBO V CB =-30V, I E = 0 -0.05 μA Emitter cut-off current I EBO V EB =-5V, I C =0 -0.05μA V CE =-1V, I C = -0.1mA 60 V CE =-1V, I C = -1mA 80 V CE =-1V, I C = -10mA 100 300 V CE =-1V, I C = -50mA 60 DC current gain h FE V CE =-1V, I C = -100mA 30 I C =-10mA, I B =-1mA -0.25V Collector-emitter saturation voltage V CE(sat) I C =-50mA, I B =-5mA -0.4 V I C =-10mA, I B =-1mA -0.65 -0.85 V Base-emitter saturation voltage V BE(sat) I C =-50mA, I B =-5mA -0.95V Transition frequency f T V CE =-20V, I C =-10mA, f=100MHz 250 MHz Output capacitance C ob V CB =-5V, I E =0, f=1MHz 4.5 pF

DSK32 SOD-123FL系列规格书推荐

DSK32 THRU DSK310SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 100 Volts Forward Current -3.0 Ampere 1of 2

RATINGS AND CHARACTERISTIC CURVES DSK32 THRU DSK310 FIG. 3-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS NUMBER OF CYCLES AT 60 Hz FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD FIG. 1- FORWARD CURRENT DERATING CURVE A V E R A G E F O R W A R D R E C T I F I E D C U R R E N T ,A M P E R E S I N S T A N T A N E O U S F O R W A R D C U R R E N T ,A M P E R E S P E A K F O R W A R D S U R G E C U R R E N T ,A M P E R E S INSTANTANEOUS FORWARD VOLTAGE, VOLTS 100 10 1 0.1 0.010.001 PERCENT OF PEAK REVERSE VOLTAGE,% FIG. 4-TYPICAL REVERSE CHARACTERISTICS I N S T A N T A N E O U S R E V E R S E C U R R E N T ,M I L L I A M P E R E S AMBIENT TEMPERATURE, C 2of 2

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20V转5V,20V转3.3V的LDO芯片规格书

40V高输入电压LDO线性稳压器一般说明 PW6206系列是一款高精度，高输入电压，低静态电流，高速，低压降线性稳压器具有高纹波抑制。在VOUT=5V&VIN=7V时，输入电压高达40V，负载电流高达300mA，采用BCD工艺制造。PW6206提供过电流限制、软启动和过热保护，以确保设备在良好的条件下工作 PW6206调节器有标准SOT89-3L和SOT23-3L封装。标准产品无铅无卤。 特点 ?输入电压：4.75V~40V ?输出电压：1.8V~5.7V ?输出精度：<±2% ?输出电流：150mA（典型值） ?最高300mA@VIN=7V，VOUT=5V，PW6206B50HV封装 ?电源抑制比：60dB@100Hz ?跌落电压：600mV@IOUT=100mA ?静态电流：4.2μA@VIN=12V（典型值） ?ESD HBM:8KV ?推荐电容器：10uF 应用芯片135代2845理8039 Mr。郑，技术工程FAE ?智能电表 ?车内娱乐 ?电动自行车 典型应用电路

应用信息 输入电容器 VIN 和GND 引脚之间需要10μF 的输入电容。电容器应尽可能靠近VIN 引脚，建议使用电解电容器。必须考虑公差和温度系数，以确保电容器在整个温度和工作条件范围内工作。 输出电容器

在实际应用中，选择输出电容器以保证其稳定运行是非常重要的。稳定和正确操作的最小电容为1μF。电容公差应在工作温度范围内±30%或更好。建议电容器类型为MLCC。 空载稳定性 PW6206将在无外部负载的情况下保持稳定和调节。这在CMOS RAM保持活动应用中尤其重要。 典型电路 下图显示了PW6206设备的典型应用电路。根据应用情况，应仔细选择外部组件的值。在插拔应用中，由于芯片上电源的插入和拔出引起的过冲会损坏芯片，因此建议VIN小于30V，输入电压峰值不超过45V。 在封堵应用中，建议R、Cin选用如下： 1Cin=10UF~100UF电解电容器，最大电压大于50V，R=0； 2Cin=1UF~10UF MLCC，最大电压V大于50V，R=2Ω，1206型电阻器应仔细选择，以确保有足够的裕度来承受插入期间的浪涌电流。

各种三极管参数

Author: admin Category: [ IC品牌 ] No comments 品名极性管脚功能参数 MPSA42 NPN 21E 电话视频放大 300V0.5A0.625W MPSA92 PNP 21E 电话视频放大 300V0.5A0.625W MPS2222A NPN 21 高频放大 75V0.6A0.625W300MHZ 9011 NPN EBC 高频放大 50V30mA0.4W150MHz 9012 PNP 贴片低频放大 50V0.5A0.625W 9013 NPN EBC 低频放大 50V0.5A0.625W 9013 NPN 贴片低频放大 50V0.5A0.625W 9014 NPN EBC 低噪放大 50V0.1A0.4W150MHZ 9015 PNP EBC 低噪放大 50V0.1A0.4W150MHZ 9018 NPN EBC 高频放大 30V50MA0.4W1GHZ 8050 NPN EBC 高频放大 40V1.5A1W100MHZ 8550 PNP EBC 高频放大 40V1.5A1W100MHZ 2N2222 NPN 4A 高频放大 60V0.8A0.5W25/200NSβ=45 2N2222A NPN 小铁高频放大 75V0.6A0.625W300MHZ 2N2369 NPN 4A 开关 40V0.5A0.3W800MHZ 2N2907 NPN 4A 通用 60V0.6A0.4W26/70NSβ=200 2N3055 NPN 12 功率放大 100V15A115W 2N3440 NPN 6 视放开关 450V1A1W15MHZ 2N3773 NPN 12 音频功放开关 160V16A150W COP 2N6609 2N3904 NPN 21E 通用 60V0.2Aβ=100-400 2N3906 PNP 21E 通用 40V0.2Aβ=100-400 2N5401 PNP 21E 视频放大 160V0.6A0.625W100MHZ 2N5551 NPN 21E 视频放大 160V0.6A0.625W100MHZ 2N5685 NPN 12 音频功放开关 60V50A300W 2N6277 NPN 12 功放开关 180V50A250W 2N6609 PNP 12 音频功放开关 160V15A150W COP 2N3773 品名极性管脚功能参数 2N6678 NPN 12 音频功放开关 650V15A175W15MHZ 2N6718 NPN 小铁音频功放开关 100V2A2W50MHZ 3DA87A NPN 6 视频放大 100V0.1A1W 3DG6A NPN 6 通用 15V20mA0.1W100MHz 3DG6B NPN 6 通用 20V20mA0.1W150MHz 3DG6C NPN 6 通用 20V20mA0.1W250MHz 3DG6D NPN 6 通用 30V20mA0.1W150MHz 3DG12C NPN 7 通用 45V0.3A0.7W200MHz 3DK2B NPN 7 开关 30V30mA0.2W 3DK4B NPN 7 开关 40V0.8A0.7W 3DK7C NPN 7 开关 25V50mA0.3W 3DD15D NPN 12 电源开关 300V5A50W 3DD102C NPN 12 电源开关 300V5A50W

全系列三极管应用参数-

全系列三极管应用参数--2 全系列三极管应用参数 名称封装极性功耐压电流功率频率配对管 D633 28 NPN 音频功放 100V 7A 40W 达林顿 9013 21 NPN 低频放大 50V 0.5A 0.625W 9012 9014 21 NPN 低噪放大 50V 0.1A 0.4W 150HMZ 9015 9015 21 PNP 低噪放大 50V 0.1A 0.4W 150MHZ 9014 9018 21 NPN 高频放大 30V 0.05A 0.4W 1000MHZ 8050 21 NPN 高频放大 40V 1.5A 1W 100MHZ 8550 8550 21 PNP 高频放大 40V 1.5A 1W 100MHZ 8050 2N2222 21 NPN 通用 60V 0.8A 0.5W 25／200NS 2N2369 4A NPN 开关 40V 0.5A 0.3W 800MHZ 2N2907 4A NPN 通用 60V 0.6A 0.4W 26／70NS 2N3055 12 NPN 功率放大 100V 15A 115W MJ2955 2N3440 6 NPN 视放开 450V 1A 1W 15MHZ 2N6609 2N3773 12 NPN 音频功放 160V 16A 50W 2N3904 21E NPN 通用 60V 0.2A 2N2906 21C PNP 通用 40V 0.2A 2N2222A 21铁 NPN 高频放大 75V 0.6A 0.625W 300MHZ 2N6718 21铁 NPN 音频功放 100V 2A 2W 2N5401 21 PNP 视频放大 160V 0.6A 0.625W 100MHZ 2N5551 2N5551 21 NPN 视频放大 160V 0.6A 0.625W 100MHZ 2N5401 2N5685 12 NPN 音频功放 60V 50A 300W 2N6277 12 NPN 功放开 180V 50A 250W 9012 21 PNP 低频放大 50V 0.5A 0.625W 9013 2N6678 12 NPN 音频功放 650V 15A 175W 15MHZ 9012 贴片 PNP 低频放大 50V 0.5A 0.625W 9013 3DA87A 6 NPN 视频放大 100V 0.1A 1W 3DG6B 6 NPN 通用 20V 0.02A 0.1W 150MHZ 3DG6C 6 NPN 通用 25V 0.02A 0.1W 250MHZ 3DG6D 6 NPN 通用 30V 0.02A 0.1W 150MHZ MPSA42 21E NPN 电话视频 300V 0.5A 0.625W MPSA92 MPSA92 21E PNP 电话视频 300V 0.5A 0.625W MPSA42 MPS2222A 21 NPN 高频放大 75V 0.6A 0.625W 300MHZ 9013 贴片 NPN 低频放大 50V 0.5A 0.625W 9012

MMST3906贴片三极管 SOT-323三极管封装MMST3906规格参数

A,Oct,2010 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors MMST3906 TRANSISTOR (PNP) FEATURES Complementary to MMST3904 MARKING:K5N MAXIMUM RATINGS (T a =25℃ unless otherwise noted) Symbol Parameter Value Unit V CBO Collector-Base Voltage -40 V V CEO Collector-Emitter Voltage -40 V V EBO Emitter-Base Voltage -5 V I C Collector Current -200 mA P C Collector Power Dissipation 200 mW R ΘJA Thermal Resistance From Junction To Ambient 625 ℃/W T j Junction Temperature 150 ℃ T stg Storage Temperature -55～+150 ℃ ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO * I C =-10μA, I E =0 -40 V Collector-emitter breakdown voltage V (BR)CEO * I C =-1mA, I B =0 -40 V Emitter-base breakdown voltage V (BR)EBO * I E =-10μA, I C =0 -5 V Base cut-off current I BL * V CE =-30V, V EB(Off)=-3V -50 nA Collector cut-off current I CEX * V CE =-30V, V EB(Off)=-3V -50 nA V CE =-1V, I C =-100μA 60 V CE =-1V, I C =-1mA 80 DC current gain h FE * V CE =-1V, I C =-10mA 100 300 I C =-10mA, I B =-1mA -0.2 V Collector-emitter saturation voltage V CE(sat)* I C =-50mA, I B =-5mA -0.3 V I C =-10mA, I B =-1mA -0.65 -0.85 V Base-emitter saturation voltage V BE(sat)* I C =-50mA, I B =-5mA -0.95 V Transition frequency f T V CE =-20V,I C =-10mA , f=100MHz 250 MHz Collector output capacitance C ob V CB =-5V, I E =0, f=1MHz 4.5 pF Collector output capacitance C ib V EB =-0.5V, I E =0, f=1MHz 10 pF Delay time t d 35 ns Rise time t r V CC =-3V, V BE(off)=-0.5V, I C =-10mA, I B1=-1mA 35 ns Storage time t s 225 ns Fall time t f V CC =3V, I C =-10mA, I B1= I B2=-1mA 75 ns *Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%. https://www.docsj.com/doc/ad7839908.html, 【南京南山半导体有限公司 — 长电三极管选型资料】