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4N26-X006中文资料

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Optocoupler, Phototransistor Output, With Base Connection

Features

?Isolation Test Voltage 5300 V RMS

?Interfaces with Common Logic Families ?Input-output Coupling Capacitance < 0.5 pF ?Industry Standard Dual-in-line 6-pin Package ?Lead-free component

Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

Agency Approvals

?UL1577, File No. E52744 System Code H or J, Double Protection

?DIN EN 60747-5-2 (VDE0884)DIN EN 60747-5-5 pending Available with Option 1

Applications

AC Mains Detection Reed relay driving

Switch Mode Power Supply Feedback Telephone Ring Detection Logic Ground Isolation

Logic Coupling with High Frequency Noise Rejection

Description

The 4N25 family is an Industry Standard Single Chan-nel Phototransistor Coupler.This family includes the 4N25/ 4N26/ 4N27/ 4N28. Each optocoupler consists of gallium arsenide infrared LED and a silicon NPN phototransistor.

These couplers are Underwriters Laboratories (UL)listed to comply with a 5300 V RMS isolation test volt-age. This isolation performance is accomplished through special Vishay manufacturing process.

Compliance to DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-5-5 pending partial discharge isolation specifi-cation is available by ordering option1.

These isolation processes and the Vishay I SO9001quality program results in the highest isolation perfor-mance available for a commercial plastic phototrans-istor optocoupler.

The devices are also available in lead formed config-uration suitable for surface mounting and are avail-able either on tape and reel, or in standard tube shipping containers.Note:

For additional design information see Application Note 45 Normalized Curves

Order Information

For additional information on the available options refer to Option Information.

Part

Remarks

4N25CTR > 20 %, DIP-64N26CTR > 20 %, DIP-64N27CTR > 10 %, DIP-64N28CTR > 10 %, DIP-6

4N25-X006CTR > 20 %, DIP-6 400 mil (option 6)4N25-X007CTR > 20 %, SMD-6 (option 7)4N25-X009CTR > 20 %, SMD-6 (option 9)4N26-X006CTR > 20 %, DIP-6 400 mil (option 6)4N26-X007CTR > 20 %, SMD-6 (option 7)4N26-X009CTR > 20 %, SMD-6 (option 9)4N27-X007CTR > 10 %, SMD-6 (option 7)4N27-X009CTR > 10 %, SMD-6 (option 9)4N28-X009

CTR > 10 %, SMD-6 (option 9)

https://www.docsj.com/doc/ed6923284.html, Document Number 83725

Absolute Maximum Ratings

T amb = 25°C, unless otherwise specified

Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability.

Input

Output

Coupler

Parameter

Test condition

Symbol Value Unit Reverse voltage V R 6.0V Forward current I F 60mA Surge current t < 10 μs

I FSM 2.5A Power dissipation

P diss

100

Parameter

Test condition

Symbol Value Unit Collector-emitter breakdown voltage V CEO 70V Emitter-base breakdown voltage V EBO 7.0V Collector current I C 50mA Collector currrent t < 1.0 ms

I C 100mA Power dissipation

P diss

150

Parameter

Test condition

Symbol Value Unit Isolation test voltage V ISO

5300V RMS Creepage ≥ 7.0mm Clearance

≥ 7.0mm Isolation thickness between emitter and detector ≥ 0.4mm

Comparative tracking index DIN IEC 112/VDE0303, part 1175Isolation resistance V IO = 500 V, T amb = 25°C R IO 1012?V IO = 500 V, T amb = 100°C

R IO 1011?Storage temperature T stg - 55 to + 150°C Operating temperature T amb - 55 to + 100

°C Junction temperature T j 100°C Soldering temperature

max.10 s, dip soldering: distance to seating plane ≥ 1.5 mm

T sld

260

°C

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Electrical Characteristics

T amb = 25°C, unless otherwise specified

Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements.

Input

Indicates JEDEC registered values

Output

Indicates JEDEC registered values

Coupler

Indicates JEDEC registered values

Current Transfer Ratio

Indicates JEDEC registered value

Parameter

Test condition

Symbol Min Typ.Max Unit Forward voltage 1)I F = 50 mA V F 1.3 1.5V Reverse current 1)V R = 3.0 V I R 0.1100

μA Capacitance

V R = 0 V

C O

Parameter

Test condition

Part Symbol Min Typ.Max Unit Collector-base breakdown voltage 1)

I C = 100 μA BV CBO 70V Collector-emitter breakdown voltage 1)

I C = 1.0 mA BV CEO 30V Emitter-collector breakdown voltage 1)I E = 100 μA

BV ECO

7.0

I CEO (dark)1)

V CE = 10 V, (base open)

4N25 5.050nA 4N26 5.050nA 4N27 5.050nA 4N28

10100nA I CBO (dark)1)

V CB = 10 V, (emitter open) 2.0

nA Collector-emitter capacitance

V CE = 0

C CE

6.0

Parameter

Test condition

Part Symbol Min Typ.Max Unit Isolation voltage 1)

Peak, 60 Hz

4N25V IO 2500V 4N26V IO 1500V 4N27V IO 1500V 4N28

V IO 500

Saturation voltage, collector-emitter

I CE = 2.0 mA, I F = 50 mA V CE(sat)0.5

V Resistance, input output 1)V IO = 500 V R IO 100

G ?Capacitance (input-output)

f = 1.0 MHz

C IO

0.5

Parameter

Test condition

Part Symbol Min Typ.Max Unit DC Current Transfer Ratio 1)

V CE = 10 V, I F = 10 mA

4N25CTR DC 2050%4N26CTR DC 2050%4N27CTR DC 1030%4N28

CTR DC

https://www.docsj.com/doc/ed6923284.html, Document Number 83725

Switching Characteristics

Typical Characteristics (Tamb = 25 °C unless otherwise specified)

Parameter Test condition

Symbol Min

Typ.Max

Unit Rise and fall times

V CE = 10 V, I F = 10 mA, R L = 100 ?

t r , t f

2.0

μs

Figure 1. Forward Voltage vs. Forward Current

Figure 2. Normalized Non-Saturated and Saturated CTR vs. LED

Current i4n25_01

100

101.1

0.7

0.80.91.01.11.21.3

1.4I F -Forward Current -mA

V F -F o r w a r d V o l t a g e -V

i4n25_02

0.0

0.5

1.0

1.50

110100

I F -LED Current -mA

N C T R -N o r m l i z e d C T R

Figure 3. Normalized Non-saturated and Saturated CTR vs. LED

Current

Figure 4. Normalized Non-saturated and saturated CTR vs. LED

Current

i4n25_03

0.0

0.5

1.0

1.5

I F -LED Current -mA

N C T R -N o r m a l i z e d C T R

i4n25_04

0.0

0.5

1.0

1.5

I F -LED Current -mA

N C T R -N o r m a l i z e d C T R

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Figure 5. Normalized Non-saturated and saturated CTR vs. LED

Current

Figure 6. Collector-Emitter Current vs. Temperature and LED

Current

Figure 7. Collector-Emitter Leakage Current vs.Temp.

i4n25_05

0.0

0.5

1.0

1.5I F -LED Current -mA

N C T R -N o r m a l i z e d C T R

i4n25_06

I F -LED Current -mA

I c e -C o l l e c t o r C u r r e n t -m A

i4n25_07

100

806040200–20

101010

1010–2

–10

123

A -Ambient Temperature -°C

I c e o -C o l l e c t o r -E m i t t e r -n A

Typical

V ce =10V Figure 8. Normalized CTRcb vs. LED Current and Temp.

Figure 9. Normalized Photocurrent vs. I F and Temp.

Figure 10. Normalized Non-saturated HFE vs. Base Current and

Temperature

i4n25_08

0.00.5

1.0

1.5

I F -LED Current -mA

N C T R

c b -N o r m a l i z e

d C T R c b

100

i4n25_09

0.01

I F -LED Current -mA

N o r m a l i z e d P h o t o c u r r e n t

110

100

i4n25_10

0.4

0.6

1.0

1.2Ib -Base Current -μA

N H F E -N o r m a l i z e d H F E

0.8

https://www.docsj.com/doc/ed6923284.html, Document Number 83725

Figure 11. Normalized HFE vs. Base Current and Temp.Figure 12. Propagation Delay vs. Collector Load Resistor

Figure 13. Switching Timing

i4n25_11

0.0

0.5

1.0

1.5

N H F E (s a t )-N o r m a l i z e d S a t u r a t e d H F E

100

1000

Ib -Base Current -μ

i4n25_12

1000RL -Collector Load Resistor -k ?

t P L H -P r o p a g

a t i o n D e l a y -μs

100

t P H L -P r o p a g a t i o n D e l a y -μs

i4n25_13

I F

V Figure 14. Switching Schematic

i4n25_14

V =5.0V

F=10V O

I F =10mA

Package Dimensions in Inches (mm)

For 4N25/26/27..... see DIL300-6 Package dimension in the Package Section.

For 4N28 and for products with an option designator (e.g. 4N25-X001 or 4N26-X007)..... see DIP-6 Package dimensions in the Package Section.

DIL300-6 Package Dimensions

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https://www.docsj.com/doc/ed6923284.html, Document Number 83725

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1.Meet all present and future national and international statutory requirements.

2.Regularly and continuously improve the performance of our products, processes, distribution and

operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.

1.Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments

respectively

2.Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental

Protection Agency (EPA) in the USA

3.Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423

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