ACS151HMSR-02中文资料

1

November 1997

ACS151MS

Radiation Hardened 8-Input Multiplexer

Features

?QML Quali?ed Per MIL-PRF-38535 Requirements ? 1.25Micron Radiation Hardened SOS CMOS

?Radiation Environment

-Latch-up Free Under any Conditions

-Total Dose. . . . . . . . . . . . . . . . . . . . . .3 x 105RAD(Si)-SEU Immunity. . . . . . . . . . .<1 x 10-10 Errors/Bit/Day -SEU LET Threshold . . . . . . . . . . .>100MeV/(mg/cm 2)?Input Logic Levels . . .V IL = (0.3)(V CC ), V IH = (0.7)(V CC )?Output Current. . . . . . . . . . . . . . . . . . . . . . . . . . . .±8mA ?Quiescent Supply Current. . . . . . . . . . . . . . . . . . .400μA ?Propagation Delay

-Enable to Output . . . . . . . . . . . . . . . . . . . . . . . . .12ns -Input or Address to Output . . . . . . . . . . . . . . . . .20ns

Applications

?Sensor Input Selection ?Data Routing

?High Frequency Switching

Description

The Radiation Hardened ACS151MS is an 8-Channel Multi-plexer having three binary control inputs and an active low enable input. The three binary input signals select the input from 1 of 8 channels.

Complementary data outputs are provided for ease of system design. If the enable input is high, the input signals are disre-garded, the Y output is set high and the Y output is set low. All inputs and outputs are buffered and are designed for balanced propagation delay and transition times.

The ACS151MS is fabricated on a CMOS Silicon on Sapphire (SOS) process, which provides an immunity to Single Event Latch-up and the capability of highly reliable performance in any radiation environment. These devices offer signi?cant power reduction and faster performance when compared to ALSTTL types.

Speci?cations for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC). The SMD numbers listed below must be used when ordering.Detailed Electrical Speci?cations for the ACS151 are contained in SMD 5962-97640. A “hot-link” is provided on our homepage with instructions for downloading.https://www.docsj.com/doc/e41335668.html,/data/sm/index.htm

Ordering Information

SMD PART NUMBER INTERSIL PART NUMBER TEMP. RANGE (o C)

PACKAGE CASE OUTLINE 5962F9764001VEC ACS151DMSR-02-55 to 125

16 Ld SBDIP CDIP2-T16N/A

ACS151D/Sample-022516 Ld SBDIP CDIP2-T165962F9764001VXC ACS151KMSR-02-55 to 125

16 Ld Flatpack CDFP4-F16N/A ACS151K/Sample-022516 Ld Flatpack CDFP4-F16N/A

ACS151HMSR-02

25

Die

N/A

Pinouts

ACS151 (SBDIP)TOP VIEW

ACS151 (FLATPACK)

TOP VIEW

14151691312111012345768

I 3I 2I 1I 0Y Y GND E V CC I 5I 6I 7S 0S 1S 2

I 4I 3I 2I 1I 0Y Y E GND

2345678

1161514131211109

V CC I 4I 5I 6I 7S 0S 1S 2

File Number

4430

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.1-888-INTERSIL or 321-724-7143|Copyright ? Intersil Corporation 1999

Die Characteristics

DIE DIMENSIONS:

Size:2390μm x 2390μm (94mils x 94mils) Thickness:525μm±25μm (20.6mils±1mil) Bond Pad: 110μm x 110μm (4.3mils x 4.3 mils)

METALLIZATION:

Type:Al

Metal 1 Thickness: 0.7μm±0.1μm

Metal 2 Thickness: 1.0μm±0.1μm

SUBSTRATE:

Silicon on Sapphire (SOS)

SUBSTRATE POTENTIAL:

Unbiased Insulator

BACKSIDE FINISH:

Sapphire

PASSIVATION:

Type: Phosphorous Silicon Glass (PSG) Thickness: 1.30μm±0.15μm

SPECIAL INSTRUCTIONS

Bond V CC First

ADDITIONAL INFORMATION:

Worst Case Density:<2.0 x 105 A/cm2 Transistor Count:166

Metallization Mask Layout

ACS151MS

I2I3V CC I4

I1 I0 Y Y

I5

I6

I7

S0 E GND S2S1

ACS151MS

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certi?cation. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or speci?cations at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

For information regarding Intersil Corporation and its products, see web site https://www.docsj.com/doc/e41335668.html,

2