DESCRIPTION
·With TO-3PN package
·High voltage ,high speed switching ·High reliability
APPLICATIONS
·Switching regulators
·Ultrasonic generators
·High frequency inverters
·General purpose power amplifiers
PINNING
PIN DESCRIPTION
1Base
2 Collector;connected to mounting base
3 Emitter
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE
UNIT V CBO Collector-base voltage Open emitter 900 V
V CEO Collector-emitter voltage Open base 800 V
V EBO Emitter-base voltage Open collector 10 V
I C Collector current 5 A
I B Base
current 3 A P C Collector power dissipation T C=25℃80 W
T j Junction
temperature 150 ℃
T stg Storage
temperature -55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX
UNIT R th j-C Thermal resistance junction case 1.5 ℃/W
2
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP . MAX UNIT
V (BR)CEO Collector-emitter breakdown voltage I C =10mA ; I B =0 800 V
V (BR)CBO Collector-base breakdown voltage I C =1mA ; I E =0 900 V
V (BR)EBO Emitter-base breakdown voltage I E =1mA ; I C =0 10 V
V CEsat Collector-emitter saturation voltage I C =2A ;I B =0.4A 1.0 V
V BEsat Base-emitter saturation voltage I C =2A ;I B =0.4A 1.5 V
I CBO Collector cut-off current V CB =900V I E =0 1.0 mA
I EBO Emitter cut-off current V EB =10V; I C =0 1.0 mA h FE
DC current gain
I C =2A ; V CE =5V
10
Switching times
t on Turn-on time 1.0 μs t s Storage time
4.0
μs t f Fall time I C =3A; R L =100Ω
I B1=0.6A; I B2=-1.2A
0.8
μs
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
4