TSM3461CX5中文资料
TSM3461CX5
20V N-Channel MOSFET w/ESD Protected
V DS = 20V
R DS (on), Vgs @ 4.5V, Ids @ 6A =22m ? (typ.) R DS (on), Vgs @ 2.5V, Ids @ 5A =35m ? (typ.)
Features
Advanced trench process technology
High density cell design for ultra low on-resistance Excellent thermal and electrical capabilities Specially designed for Li-ion battery packs. Battery switch application
Ordering Information
Part No. Packing Package TSM3461CX5 RF
Tape & Reel 3,000/per reel
SOT-25
Block Diagram
Absolute Maximum Rating (Ta = 25 o C unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage V DS 20V V Gate-Source Voltage
V GS ± 12 V
Ta = 25 o C I D 6 A Continuous Drain Current, V GS @4.5V.
Ta = 70 o C I D
5
A
Pulsed Drain Current, V GS @4.5V I DM 30 A Diode Forward Current Is
1.5
A
Ta = 25 o C 1.3 Maximum Power Dissipation
Ta = 70 o C
P D 0.96
W Operating Junction and Storage Temperature Range T J , T STG
- 55 to +150
o
C
Thermal Performance
Parameter Symbol Limit Unit
Junction to Foot (Drain) Thermal Resistance
R θjf 35 o
C/W
Junction to Ambient Thermal Resistance (PCB mounted) R θja 120 o C/W
Note: Surface mounted on FR4 board t<=300uS, Duty < 2%.
Pin assignment:1. Drain
5. Drain 2. Drain 3. Gate 4. Source
Electrical Characteristics
Tj = 25 o C unless otherwise noted
Parameter Conditions Symbol Min Typ Max
Unit
Static
Drain-Source Breakdown Voltage V GS = 0V, I D = 250uA BV DSS 20 -- -- V
Drain-Source On-State Resistance V GS = 4.5V, I D = 6A 25 o C R DS(ON)-- 25 30
V GS = 4.5V, I D = 6A 60 o C R DS(ON)
-- 40 50 m ? Drain-Source On-State Resistance V GS = 2.5V, I D = 5A R DS(ON)-- 35 45 m ? Gate Threshold Voltage V DS = V GS , I D = 250uA V GS(TH)0.5 0.85 -- V V DS = 12V, V GS = 0V
--
--
1.0
Zero Gate Voltage Drain Current V DS = 12V, V GS = 0V, Tj = 60 o C I DSS
-- -- 25
uA
Gate Body Leakage V GS = ± 12V, V DS = 0V I GSS -- -- ± 100nA On-State Drain Current V GS = 4.5V, V DS >= 5V I D(ON) 30 -- -- A Forward Transconductance
V DS = 10V, I D = 6A g fs -- 30 -- S Dynamic *
Total Gate Charge Q g -- 15.5 30 Gate-Source Charge Q gs -- 2 -- Gate-Drain Charge V DS = 10V, I D = 6A, V GS = 4.5V
Q gd --
3.5 -- nC Turn-On Delay Time t d(on) -- 75 100 Turn-On Rise Time t r -- 125 150 Turn-Off Delay Time t d(off) -- 600 720 Turn-Off Fall Time V DD = 10V, R L = 10?, I D = 1A, V GEN =
4.5V, R G = 6?
t f --
300 360 nS Input Capacitance C iss -- 1336 -- Output Capacitance
C oss -- 220 -- Reverse Transfer Capacitance V DS = 10V, V GS = 0V, f = 1.0MHz
C rss --
130 -- pF Source-Drain Diode Max. Diode Forward Current
I S -- -- 1.5 A Diode Forward Voltage
I S = 1.5A, V GS = 0V
V SD -- 0.6 1.2 V
pulse test: pulse width <=300uS, duty cycle <=2%
Typical Characteristics Curve (Ta = 25 o C unless otherwise noted)
Electrical Characteristics Curve (continued)
SOT-25 Mechanical Drawing
SOT-25 DIMENSION
MILLIMETERS INCHES
DIM
MIN MAX MIN MAX
A 2.70 3.00 0.106 0.118
B 0.25 0.50 0.010 0.020
C 1.90(typ) 0.075(typ)
D 0.95(typ) 0.037(typ)
E 1.50 1.70 0.059 0.067
F 1.00 1.2 0.040 0.047 H 2.60 3.00 0.102 0.118 L 0.60(typ)
0.024(typ)